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Search Results: Records 1-20 displayed on this page of 48

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Oral presentation

Evaluation of charge-changing cross sections of fast carbon cluster ions through carbon foil

Adachi, Masahiro; Saito, Yuichi; Chiba, Atsuya; Narumi, Kazumasa; Kaneko, Toshiaki*

no journal, , 

no abstracts in English

Oral presentation

Si atom emission kinetics during oxidation on Si(001) surfaces, 10; Correlation between strained Si atoms and growth rate

Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

no journal, , 

no abstracts in English

Oral presentation

Repititive highly collimated intense proton beam in the sub-MeV energy range produced by a compact tera-Watt femto-second laser

Takai, Mamiko; Daido, Hiroyuki; Sagisaka, Akito; Ogura, Koichi; Orimo, Satoshi; Kado, Masataka; Yogo, Akifumi; Mori, Michiaki; Hayashi, Yukio; Bulanov, S. V.; et al.

no journal, , 

We obtain a highly collimated sub-MeV proton beam with divergence angle of 10 degrees during the interaction of a few terawatt table-top Titanium Sapphaire laser pulse with a thin-metalic foil. By using the proton beam, we obtain a good quality projection imaging of a micrometer size mesh structure. The quantitative characterization of the beam is carried out. The transverse emittance of the beam is obtained to be less than 0.1 $$pi$$ mm mrad.

Oral presentation

Sensitivity test of the ionization chamber in high field science

Hayashi, Yukio; Kando, Masaki; Kotaki, Hideyuki; Daito, Izuru; Chen, L.-M.; Fukuda, Yuji; Kondo, Shuji; Mori, Michiaki; Ogura, Koichi; Daido, Hiroyuki; et al.

no journal, , 

no abstracts in English

Oral presentation

High-quality electron beam generation by laser-plasma interaction

Kotaki, Hideyuki; Daito, Izuru; Kando, Masaki; Fukuda, Yuji; Hayashi, Yukio; Chen, L.-M.; Homma, Takayuki; Bolton, P.*; Ma, J.-L.; Mori, Michiaki; et al.

no journal, , 

no abstracts in English

Oral presentation

Evaluation of a spatial resolution in 10 MeV/u class focusing heavy ion microbeam system

Oikawa, Masakazu*; Sato, Takahiro; Kashiwagi, Hirotsugu; Miyawaki, Nobumasa; Kurashima, Satoshi; Okumura, Susumu; Yokota, Wataru; Kamiya, Tomihiro

no journal, , 

no abstracts in English

Oral presentation

The Effect of accuracy of the transition wavelengths to the emisivity and opacity of Sn plasmas

Sasaki, Akira; Nishihara, Katsunobu*; Sunahara, Atsushi*; Nishikawa, Takeshi*; Koike, Fumihiro*; Kagawa, Takashi*; Tanuma, Hajime*

no journal, , 

no abstracts in English

Oral presentation

Advanced ceramics synthesis produced by laser/CVD plasma, Plasma Behavior

Yamauchi, Toshihiko; Nakagaki, Keita*; Kanno, Yoshinori*; Kobayashi, Seiji*; Saigusa, Mikio*; Takemoto, Ryo*; Yamashita, Naohito*; Kawashima, Tomohiro*

no journal, , 

no abstracts in English

Oral presentation

Radiation effects for film formation and nano-structural changes of iron disilicide thin films

Sasase, Masato*; Yamamoto, Hiroyuki; Okayasu, Satoru; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi

no journal, , 

Radiation effects for film formation and nano-structural changes of iron disilicide thin films have been studied.

Oral presentation

Thermal preannealing of single crystalline $$beta$$-FeSi$$_{2}$$ substrate for MBE

Ouchi, Shinji*; Muroga, Masataka*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*

no journal, , 

Thermal preannealing of single crystalline $$beta$$-FeSi$$_{2}$$ substrate for MBE has been investigated to obtain better substrate for homo-epitaxial growth of $$beta$$-FeSi$$_{2}$$ film.

Oral presentation

RHEED observation of surface on $$beta$$-FeSi$$_{2}$$ single crystals

Wakaya, Ippei*; Muroga, Masataka*; Ouchi, Shinji*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*

no journal, , 

RHEED observation of surface has been performed on $$beta$$-FeSi$$_{2}$$ single crystals.

Oral presentation

In situ X-ray diffraction during molecular-beam epitaxial growth of semiconductor nanostructures

Takahashi, Masamitsu; Kaizu, Toshiyuki; Mizuki, Junichiro

no journal, , 

no abstracts in English

Oral presentation

Structure of the a-SiC film prepared by reactive Pulsed Laser Deposition (PLD)

Saeki, Morihisa; Oba, Hironori; Yamada, Yoichi; Yamamoto, Hiroyuki; Esaka, Fumitaka; Yokoyama, Atsushi

no journal, , 

no abstracts in English

Oral presentation

High energy proton generation with thin-foil targets

Sagisaka, Akito; Daido, Hiroyuki; Yogo, Akifumi; Ogura, Koichi; Orimo, Satoshi; Ma, J.-L.; Mori, Michiaki; Pirozhkov, A. S.; Takai, Mamiko; Oishi, Yuji*; et al.

no journal, , 

no abstracts in English

Oral presentation

Degradation of the characteristics of SiC MOSFETs by $$gamma$$-ray induced interface traps

Oshima, Takeshi; Hishiki, Shigeomi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi

no journal, , 

p-channel silicon carbide (SiC) metal-oxide-semiconductor field effect transisters were irradiated with $$gamma$$-rays at dose rate of 0.87$$sim$$8.70kGy/h at room temperature. As a result of electrical characteristics measurements, it was found that the channel mobility decreased with the density of interface traps. By thermal annealing up to 400$$^{circ}$$C, the density of interface traps generated by $$gamma$$-rays decreases and as a result, the recovery of channel mobilty were obsereved. Threshold volatge also recovered by the thermal annealing.

Oral presentation

$$gamma$$-ray irradiation effects on the characteristics of p-type 6H-SiC schottky diodes

Sudjadi, U.; Oshima, Takeshi; Iwamoto, Naoya; Hishiki, Shigeomi; Kawano, Katsuyasu*

no journal, , 

$$gamma$$-ray irradiation effects on the characteristics of P type 6H-SiC Schottky diodes ware studied. Schottky diodes were fabricated on P-type 6H-SiC epitaxial layers grown on P type 6H-SiC substrate. The doping concentration of the epi-layer is 5.9$$times$$10$$^{15}$$/cm$$^{3}$$. The ohmic contact of the back side were fabricated by the evaporation of Al/Ni and subsequent annealing at 1100$$^{circ}$$C for 60 sec in vacuum ambient. Ni Schottky contacts with diameters of 30$$sim$$300 $$mu$$m were formed on the P type epi-layer using a photolithography technique. The samples were irradiated with $$gamma$$-rays up to 182.7 kGy at room temperature. During the irradiation, no bias was applied to diodes. The dose rates of irradiation were 0.5$$sim$$1.0 Mrad/hour. The electrical characteristics of the diodes were evaluated before and after irradiation. As the results, the leakage current density decreases with increasing absorbed dose up to 35 kGy, and the saturation of the leakage current density is observed above 35 kGy. For the Saturation current density, the values decrease with increasing up to 35 kGy, and no significant change is observed above 35 kGy.

Oral presentation

Development of multilayer laminar-type spherical gratings for use with soft X-ray flat-field spectrographs, 1

Koike, Masato; Ishino, Masahiko; Imazono, Takashi

no journal, , 

no abstracts in English

Oral presentation

Heat stability evaluations of multilayer mirrors for use in the 1-8 keV region

Ishino, Masahiko; Koike, Masato; Sano, Kazuo*

no journal, , 

no abstracts in English

Oral presentation

Ultrabroadband optical parametric chirped-pulse amplification pumped by Yb:YLF CPA laser

Akahane, Yutaka; Aoyama, Makoto; Ogawa, Kanade; Tsuji, Koichi; Harimoto, Tetsuo*; Kawanaka, Junji*; Nishioka, Hajime*; Fujita, Masayuki*; Yamakawa, Koichi

no journal, , 

no abstracts in English

Oral presentation

Correlation between metastable adsorbate and Si oxidation states in O$$_{2}$$ adsorption on Si(111)-7$$times$$7 at room temperature

Yoshigoe, Akitaka; Teraoka, Yuden

no journal, , 

We found that the metastable adsorbate was assigned to be the molecularly adsorbate normally observed in oxygen adsorption process on Si(111)-7$$times$$7 at room temperature exsisting on Si adatoms having oxygen atoms at the backbond, thus it indicated that it is not precursor states in the dissociative adsorption process on clean Si(111)-7$$times$$7. Since the number of oxugen atoms at the backbond of Si adatom has not been clear due to only O1s XPS measurement, we studied the initial adsorption process based on the Si oxidation number by means of Si2p XPS measurement. All experiment were performed SUREAC2000 at BL23SU in SPring-8. The clean surface exposed in the oxygen gas ambient whose pressure was controlled by variable leak valve to be 5.3$$times$$10-7Pa. Real-time O1s and Si2p XPS measurement was performed. The Si$$^{2+}$$ oxidation states was clearly observed at the observable condition of metastable adsorbate in Si2p XPS. This result indiacates that the metastable adsorbates is assigned to be ins-paul structure. Furthemore, when the metastable adsorbate disappeared, the Si$$^{3+}$$ oxidation state was observed, thus the insx2-ad structure was formed via the oxygen dissociative process of ins-paul.

48 (Records 1-20 displayed on this page)